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ROHM SCT2H12NY 1700V 4A SiC Power MOSFET – High-Voltage N-Channel SMD Transistor, TO-268-2L
ROHM SCT2H12NY is a 1700V 4A N-channel SiC power MOSFET in a TO-268-2L SMD package, featuring approximately 1.15Ω typical RDS(on) and fast switching performance for high-voltage power applications.
Stock: 0SKU: SEN-GENERIC-SCT2H12NY-1700VModel: SCT2H12NY 1700V
BDT 1,150BDT 1,200
Final pricing may vary by configuration, quantity, delivery and project requirements.
Product overview
The ROHM SCT2H12NY is a high-voltage N-channel Silicon Carbide (SiC) power MOSFET designed for high-voltage switching applications such as auxiliary power supplies and switch-mode power supplies.
It features a 1700V drain-source voltage rating, 4A continuous drain current at Tc = 25°C, and typical on-resistance of approximately 1.15Ω. The device is designed for fast switching and simple gate drive operation. :contentReference[oaicite:0]{index=0}
- Manufacturer: ROHM Semiconductor
- Part Number: SCT2H12NY
- Device Type: N-Channel SiC Power MOSFET
- Drain-Source Voltage (VDSS): 1700V
- Continuous Drain Current: 4A at Tc = 25°C
- Typical RDS(on): 1.15Ω
- Power Dissipation: 44W at Tc = 25°C
- Maximum Junction Temperature: 175°C
- Gate-Source Voltage: -6V to +22V DC
- Package: TO-268-2L
- Mounting: SMD
The SCT2H12NY uses a planar SiC MOSFET structure and provides a long creepage distance with no center lead, making it suitable for high-voltage switching designs. ROHM lists the SCT2H12NY as a last-time-buy/EOL product. :contentReference[oaicite:1]{index=1}